A method for reconstructing the spatial profile of the electric field along the thickness of a generic bulk solid-state photodetector is proposed. Furthermore, the mobility and lifetime of both electrons and holes can be evaluated contextually. The method is based on a procedure of minimization built up from current transient profiles induced by laser pulses in a planar detector at different applied voltages. The procedure was tested in CdTe planar detectors for X- and Gamma rays. The devices were measured in a single-carrier transport configuration by impinging laser light on the sample cathode. This method could be suitable for many other devices provided that they are made of materials with sufficiently high resistivity, i.e., with a sufficiently low density of intrinsic carriers. (C) 2014 AIP Publishing LLC.

The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

We study charge transients induced by optical pulses in CdTe detectors. Different carrier dynamics and collection properties are observed in the signals induced by optical excitation in the wavelength range 500-1650 nm, depending on the absorption and on the transport mechanism involved. A systematic comparison between charge transients, by irradiation through cathode and anode contacts, allows to point out the role of defects near the surface, instability effects, deep level transitions into the bulk, and internal photoelectric effects at the contacts.

Schottky CdTe X-ray detectors exhibit excellent spectroscopic performance but suffer from instabilities. Hence it is of extreme relevance to investigate their electrical properties. A systematic study of the electric field distribution and the current flowing in such detectors under optical perturbations is presented here. The detector response is explored by varying experimental parameters, such as voltage, temperature, and radiation wavelength. The strongest perturbation is observed under 850 nm irradiation, bulk carrier recombination becoming effective there. Cathode and anode irradiations evidence the crucial role of the contacts, the cathode being Ohmic and the anode blocking. In particular, under irradiation of the cathode, charge injection occurs and peculiar kinks, typical of trap filling, are observed both in the current-voltage characteristic and during transients. The simultaneous access to the electric field and the current highlights the correlation between free and fixed charges, and unveils carrier transport/collection mechanisms otherwise hidden.

CdTe Schottky diodes for X- and ?-ray detection exhibit excellent spectroscopic performance, even though these are not stable under operative voltages. Improvements require the comprehension of the main carrier transport mechanisms, presently unclear. We address this issue by correlating the internal electric field and the flowing current. Depending on the temperature and applied voltage, different mechanisms become dominant where the deep levels always play a central role. Indeed, the partial ionization of deep levels directly controls the electric field distribution. Transient measurements show how, under high voltages, the field at the contacts controls the current flowing through the detector. © 2013 American Institute of Physics.

In this work we proposed design, fabrication and functional characterization of a very low cost energy autonomous, maintenance free, flexible and wearable micro thermoelectric generator (mu TEG), finalized to power very low consumption electronics ambient assisted living (AAL) applications. The prototype. integrating an array of 100 thin films thermocouples of Sb(2)Te(3) and Bi(2)Te(3), generates, at 40 degrees C, an open circuit output voltage of 430 mV and an electrical output power up to 32 nW with matched load. In real operation conditions of prototype, which are believed to be very close to a thermal gradient of 15 degrees C. the device generates an open circuit output voltage of about 160 mV, with an electrical output power up to 4.18 nW.In the first part of work, deposition investigation Sb(2)T(e)3 and Bi(2)Te(3) thin films alloys on Kapton HN polyimide foil by RF magnetron co-sputtering technique is discussed. Deposition parameters have been optimized to gain perfect stoichiometric ratio and high thermoelectric power factor: fabricated thermo-generator has been tested at low gradient conditioned to evaluate applications like human skin wearable power generator for ambient assisted living applications.

Concentrated solar power (CSP) plants are one of several renewable energy technologies with significant potential to meet a part of our future energy demand. By now, CSP systems are used to supply photovoltaic or thermal power plant, but results on nanorectennas suggest the possibility to use this technology for direct energy conversion of solar radiation into electricity. A rectenna is a rectifying antenna that can be used to directly convert wave energy into DC electricity. Experiences in microwave applications have shown energy conversion efficiency in the order of 85%, and recently empirical tests have demonstrated that this technology can be used up to the infrared wavelength. The present paper, together with first preliminary results on the fabrication of the rectifier (the key element of a rectenna) and its electrical behavior, proposes the numerical simulation of a new CSP system where a receiver, heated by concentrated solar radiation, reemits infrared energy on the nanorectenna, which converts the incoming energy into electricity. In this way the receiver plays the role of a sunlight radiation converter to infrared energy. The numerical simulation of the system consists of two steps. The first is a ray-tracing model to calculate the concentrator optical efficiency and the energy distribution on the focusing area of the parabolic mirror. The second step consists in the receiver temperature calculation as function of the incident solar radiation. The numerical procedure allows the calculation of the concentrator/receiver assembly performance which returns the energy incident on the nanorectenna as a function of external environmental conditions. Copyright © 2012 by ASME.

1 MeV copper ions were implanted in polycarbonate (PC) matrices with fluences ranging from 5 x 10(13) ions cm(-2) to 1 x 10(17) ions cm(-2) in order to modify the optical and electrical properties of the polymer host. Increasing the ion fluence, an increase of the overall absorption and a redshift of the optical band gap were observed, from the initial value of 3.40 eV for the pristine PC to 0.80 eV measured for 1 x 10(17) ions cm(-2). For fluences above 5 x 10(14) ions cm(-2) a broad optical absorption bands at 450-475 nm and 520 nm were observed and, from 1 x 10(16) ions cm(-2), an additional band appeared at 570 nm. Both bands redshift when the fluence is increased. On the contrary, the optical response of the highest fluence sample is characterized by an overall band at 580 nm. The chemical modifications observed in the polymer range from induced -OH stretching, C=O and -C=C- double bonds and -C C and CH triple bonds formation, as the ion fluence increases. The implantation process affects the electrical properties of the polymer leading to a strong reduction in sheet resistance when ion fluence exceeds 5 x 10(16) ions cm(-2). A value of similar to 7.1 x 10(7) Omega/sq has been obtained for the highest fluence, i.e. about 10 order of magnitude lower than the pristine PC.

Present work proposed design, finite element tools simulation and prototype fabrication of a low cost energy autonomous, maintenance free, flexible and wearable micro thermoelectric generator (mu TEG), finalized to power very low consumption electronics Ambient Assisted Living (AAL) applications. The prototype, integrating an array of 100 thin films thermocouples of Sb2Te3 and Bi2Te3, generates, at 40 degrees C, an open circuit output voltage of 430 mV and an electrical output power up to 32 nW with matched load. In real operation conditions of prototype, which are believed to be very close to a thermal gradient of 15 degrees C, the device generates an open circuit output voltage of about 160 mV, with an electrical output power up to 4.18 nW. In this work we proposed design, thermal simulation and fabrication of a preliminary flexible and wearable micro thermoelectric generator (mu TEG), finalized to power very low consumption electronics for Ambient Assisted Living (AAL) applications. Presented simulations show the performances of different fabrication solution for the PDMS/Kapton packages, considering flat and sloped walls approach for thermal gradient enhancement.

Great efforts are being presently devoted to the development of CdTe and CdZnTe detectors for a large variety of applications, such as the basic, medical, industrial, and space research.The purpose of this work is to present the spectroscopic properties of some CZT crystals grown by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR. By this technique the crystal, during the growth, is fully encapsulated by a thin layer of liquid boron oxide, so that the crystal-crucible contact is prevented, thus allowing larger single grains with lower dislocation density to be obtained.Several detectors were realized about 4 mm x 4 mm x 1 mm in size, with two planar gold contacts on both the surfaces realized by an electroless technique.The behavior of these detectors was studied as a function of the bias voltage, irradiation geometry and energy of the interacting photons. Good electron charge collection properties have been demonstrated and electric field distribution has been investigated using the Pockels effect.

The objective of this paper is to study the morphology, structure, and composition, as well as the thermal-induced morphological, structural, and chemical changes of copper(Cu)/titanium nitride(TiN) bilayers versus Cu single layers, deposited on silicon substrates for microelectronic applications. These characterizations aimed to assess the reliability of Cu metallization for local interconnect and to investigate the barrier capability of TiN against Cu diffusion into the silicon (Si) substrate. Moreover, this paper provides a fundamental study of the temperature-induced interactions between Cu and Si, intermediated by the presence of a thin TiN layer. Cu thin films were sputtered onto Si substrates, with and without the interposition of thin TiN layers, and were successively annealed at temperature as high as 600. C. Different nitrogen flux percentages in the sputtering mixture (Ar + N-2) were used for the deposition of the barriers. X-ray diffraction (XRD) analyses were carried out in order to study the structural evolution of the layers, before and after the annealing. Scanning electron microscopy (SEM) observations gave information about the surface and cross section morphology, and spatially resolved energy dispersive X-ray Spectroscopy (EDS) profiles provided chemical information about the cross-sectional distribution of the atomic species and their possible interdiffusion. The barrier efficacy has been demonstrated by comparing the morphological and chemical modifications of the annealed Cu layers, with and without the presence of the TiN layer, and their effects on the electrical properties of the Cu films.