Abstract

Group III-V coaxial core-shell semiconducting nanowire heterostructures possess unique advantages over their planar counterparts in logic, photovoltaic, and light-emitting devices. Dimensional confinement of electronic carriers and interface complexity in nanowires are known to produce local electronic potential landscapes along the radial direction that deviate from those along the normal to planar heterojunction interfaces. However, understanding of selected electronic and optoelectronic carrier transport properties and device characteristics remains lacking without a direct measurement of band alignment in individual nanowires. Here, we report on, in the GaAs/AlxGa1-xAs and GaAs/AlAs core-shell nanowire systems, how photocurrent and photoluminescence spectroscopies can be used together to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets.

Autore Pugliese

• Prete Paola

Tutti gli autori

• Chen G.; Sun G.; Ding Y.J.; Prete P.; Miccoli I.; Lovergine N.; Shtrikman H.; Kung P.; Livneh T.; Spanier J.E.

Titolo volume/Rivista

Nano letters

Anno di pubblicazione

2013

ISSN

1530-6992

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

Ultimo Aggiornamento Citazioni

Non Disponibile

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile