Abstract

An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribution and electrical activation in Ge is reported. We performed detailed structural, chemical, and electrical characterizations of Ge samples implanted with B (20 keV, 1 x 10 15, or 1 x 10(16) B/cm(2)) and processed by ELA (lambda = 308 nm) with multiple pulses (1, 3, or 10). We also developed a diffusion model, in order to simulate the B redistribution induced by the ELA process. We found an anomalous impurity redistribution in the molten phase, which causes a dopant incorporation during the melt-growth at the maximum melt depth. The investigated samples showed a partial electrical activation of the B dopant. The inactivation of B in the samples implanted with 1 x 10(15) B/cm(2) was correlated to an oxygen contamination, while the poor electrical activation of B in the samples implanted with 1 x 10(16) B/cm(2) was related to the precipitation of the dopant, in good agreement with the experimental and theoretical results.

Autore Pugliese

• Cuscuna' Massimo

Tutti gli autori

• Impellizzeri G.; Napolitani E.; Boninelli S.; Fisicaro G.; Cuscunà M.; Milazzo R.; La Magna A.; Fortunato G.; Priolo F.; Privitera V.

Titolo volume/Rivista

Journal of applied physics

Anno di pubblicazione

2013

ISSN

0021-8979

ISBN

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Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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