Tunneling Magnetoresistance with Sign Inversion in Junctions Based on Iron Oxide Nanocrystal Superlattices

Abstract

Magnetic tunnel junctions sandwiching a superlattice thin film of iron oxide nanocrystals (NCs) have been investigated. The transport was found to be controlled by Coulomb blockade and single-electron tunneling, already at room temperature. A good correlation was identified to hold between the tunnel magnetoresistance (TMR), the expected magnetic properties of the NC arrays, the charging energies evaluated from current−voltage curves, and the temperature dependence of the junction resistance. Notably, for the first time, a switching from negative to positive TMR was observed across the Verwey transition, with a strong enhancement of TMR at low temperatures.


Tutti gli autori

  • I. C. Lekshmi , R. Buonsanti , C. Nobile , R. Rinaldi , P. D. Cozzoli , G. Maruccio

Titolo volume/Rivista

ACS NANO


Anno di pubblicazione

2011

ISSN

1936-0851

ISBN

Non Disponibile


Numero di citazioni Wos

27

Ultimo Aggiornamento Citazioni

28/04/2018


Numero di citazioni Scopus

25

Ultimo Aggiornamento Citazioni

28/04/2018


Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile