Tunneling Magnetoresistance with Sign Inversion in Junctions Based on Iron Oxide Nanocrystal Superlattices
Abstract
Magnetic tunnel junctions sandwiching a superlattice thin film of iron oxide nanocrystals (NCs) have been investigated. The transport was found to be controlled by Coulomb blockade and single-electron tunneling, already at room temperature. A good correlation was identified to hold between the tunnel magnetoresistance (TMR), the expected magnetic properties of the NC arrays, the charging energies evaluated from current−voltage curves, and the temperature dependence of the junction resistance. Notably, for the first time, a switching from negative to positive TMR was observed across the Verwey transition, with a strong enhancement of TMR at low temperatures.
Autore Pugliese
Tutti gli autori
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I. C. Lekshmi , R. Buonsanti , C. Nobile , R. Rinaldi , P. D. Cozzoli , G. Maruccio
Titolo volume/Rivista
ACS NANO
Anno di pubblicazione
2011
ISSN
1936-0851
ISBN
Non Disponibile
Numero di citazioni Wos
27
Ultimo Aggiornamento Citazioni
28/04/2018
Numero di citazioni Scopus
25
Ultimo Aggiornamento Citazioni
28/04/2018
Settori ERC
Non Disponibile
Codici ASJC
Non Disponibile
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