Abstract

We investigate the optical properties of ITO and Cr-doped ITO films deposited at room temperature by pulsed laser deposition onto amorphous SiO2 substrates. Our analysis approach is based on the Tauc's plot method applied to the absorption coefficient estimated by a route realistically describing the film structural features and including the contribution of the non-measurable film–substrate interface. Going beyond the conventional application of the Tauc's plot method, we quote two different transition energies for ITO and Cr-doped ITO and discuss their origin in the framework of a band-structure picture as a function of film thickness, Cr changes of the host ITO dispersion and Cr-doping content. In contrast to the conventional optical ITO description, we account for the existence of direct dipole forbidden transitions between the ITO fundamental band edges, involving different electronic and optical band gaps. Our results and discussion demonstrate that disregarding this theoretically established picture, as occurs in the experimental literature, would lead to conclusions inconsistent with the Cr-induced band occupation and effects on ITO dispersions. Preliminary optical (based on transmittance and reflectance spectra as well as band-tailing effects), electrical and structural inspection of the samples are also considered to check reliability and consistency of our discussion.

Autore Pugliese

• Martino Maurizio , Caricato Anna Paola , Maruccio Giuseppe

Tutti gli autori

• Cesaria M. , Caricato A.P. , Maruccio G. , Martino M.

Titolo volume/Rivista

JOURNAL OF LUMINESCENCE

Anno di pubblicazione

2015

ISSN

0022-2313

ISBN

Non Disponibile

Numero di citazioni Wos

2

Ultimo Aggiornamento Citazioni

28/04/2018

Numero di citazioni Scopus

3

Ultimo Aggiornamento Citazioni

22/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile