Nanofabrication for Molecular Scale Devices
Abstract
The predicted 22-nm barrier which is seemingly going to put a final stop to Moore’s law is essentially related to the resolution limit of lithography. Consequently, finding suitable methods for fabricating and patterning nanodevices is the true challenge of tomorrow’s electronics. However, the pure matter of moulding devices and interconnections is interwoven with research on new materials, as well as architectural and computational paradigms. In fact, while the performance of any fabrication process is obviously related to the characteristic of the materials used, a particular fabrication technique can put constraints on the definable geometries and interconnection patterns, thus somehow biasing the upper levels of the computing machine. Further, novel technologies will have to account for heat dissipation, a particularly tricky problem at the nanoscale, which could in fact prevent the most performing nanodevice from being practically employed in complex networks. Finally, production costs – exponentially growing in the present Moore rush – will be a key factor in evaluating the feasibility of tomorrow technologies. The possible approaches to nanofabrication are commonly classified into top-down and bottom-up. The former involves carving small features into a suitable bulk material; in the latter, small objects assemble to form more complex and articulated structures. While the present technology of silicon has a chiefly top-down approach, bottom-up approaches are typical of the nanoscale world, being directly inspired by nature where molecules are assembled into supramolecular structures, up to tissues and organs. As top-down approaches are resolution-limited, boosting bottom-up approaches seems to be a good strategy to future nanoelectronics; however, it is highly unlikely that no patterning will be required at all, since even with molecular-scale technologies there is the need of electrically contacting the single elements and this most often happens through patterned metal contacts, although all-molecular devices were also proposed. Here, we will give some insight into both top-down and bottom-up without the intention to be exhaustive, because of space limitations.
Autore Pugliese
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S.Kumar , S. Karmakar , A. Bramanti , R. Rinaldi , G. Maruccio
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Anno di pubblicazione
2011
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