Dielectric investigation of high-k yttrium copper titanate thin films

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Abstract

We report on the first dielectric investigation of high-k yttrium copper titanate thin films, which were demonstrated to be very promising for nanoelectronics applications. The dielectric constant of these films is found to vary from 100 down to 24 (at 100 kHz) as a function of deposition conditions, namely oxygen pressure and film thickness. The physical origin of such variation was investigated in the framework of universal dielectric response and Cole–Cole relations and by means of voltage dependence studies of the dielectric constant. Surface-related effects and charge hopping polarization processes, strictly dependent on the film microstructure, are suggested to be mainly responsible for the observed dielectric response. In particular, the bulky behaviour of thick films deposited at lower oxygen pressure evolves towards a more complex and electrically heterogeneous structure when either the thickness decreases down to 50 nmor the films are grown under high oxygen pressure.

Autore Pugliese

Tutti gli autori

  • A.G. Monteduro , Z. Ameer , M. Martino , A.P. Caricato , V. Tasco , I.C. Lekshmi , R. Rinaldi , A. Hazarika , D. Choudhury , D.D. Sarma , G. Maruccio

Titolo volume/Rivista

JOURNAL OF MATERIALS CHEMISTRY. C

Anno di pubblicazione

2016

ISSN

2050-7526

ISBN

Non Disponibile

Numero di citazioni Wos

3

Ultimo Aggiornamento Citazioni

28/04/2018

Numero di citazioni Scopus

4

Ultimo Aggiornamento Citazioni

22/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile