Silicon Derivate Layers/Films Produced by Silicatein-Mediated Templating and Process for Making the Same
Abstract
The present invention concerns a process for preparing products having layers/films of silicon derivates comprising the following steps: a) Preparing a mould made of elastomeric material and having a plurality of grooves with mutual spacing in the range from 1 μm to 1 mm; b) incubating the mould of step a) in a solution of silicateins in a range of temperatures from 2 to 10° C. and in a range of time from a few minutes to 103 hours; c) providing a target substrate of silicon or oxides thereof; d) transferring the silicateins from the mould to the said target substrate through soft lithography technique for a time period from a few seconds to 103 hours and removing the elastomeric mould; e) incubating the substrate with patterned silicateins of step d) in a solution of one or more precursors belonging to the class of silane compounds for a time period in a range from a few seconds to 103 hours in a temperature range from 2° C. to 25° C. The invention concerns also a product obtainable by the disclosed process having remarkable electrical features.
Classe Tecnologica
B - Performing operations, transporting
Patent Office
United States Patent and Trademark Office
Numero Deposito
US2011281077
Anno Deposito
2010
Anno Concessione
2011
Inventori Pugliesi
- Pisignano Dario
- Biasco Adriana Lucia Angela
- Camposeo Andrea
- Pagliara Stefano
- Polini Alessandro
Tutti gli inventori
- Dario Pisignano
- Adriana Lucia Angela Biasco
- Andrea Camposeo
- Stefano Pagliara
- Alessandro Polini
- Heinz -christoph Schroder
- Werner E.g. Muller
Titolari pugliesi
- BIASCO ADRIANA LUCIA ANGELA
- CAMPOSEO ANDREA
- PAGLIARA STEFANO
- PISIGNANO DARIO
- POLINI ALESSANDRO
Tutti i titolari
- BIASCO ADRIANA LUCIA ANGELA
- CAMPOSEO ANDREA
- PAGLIARA STEFANO
- PISIGNANO DARIO
- POLINI ALESSANDRO
- MUELLER WERNER E G
- SCHROEDER HEINZ-CHRISTOPH
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