The manuscript describes the design, preparation and characterization of two structurally isomeric random poly(arylene−vinylene)s, the properties of which have been optimized for their use as donor materials in BHJ solar cells. The structure of the polymers was aimed at broadening as much as possible their absorption profile. Poly[9,9-dioctylfluorene− vinylene-co-4,7-dithiophen-2-yl-benzo[1,2,5]thiadiazole−vinylene] (P1) and poly[2,7-dithiophen-2-yl-9,9-dioctylfluorene−vinylene- co-4,7-benzo[1,2,5]thiadiazole−vinylene] (P2) were prepared using the Suzuki−Heck polymerization. The polymers were characterized by elemental analysis, NMR, UV−vis absorption and photoluminescence, cyclic voltammetry, and GPC. The electrochemical characterization of P1 and P2 revealed similar HOMO/LUMO energy levels, although the UV−vis absorption profile of P2 is markedly broader than the one exhibited by P1. The more panchromatic absorption of P2 was explained by DFT and TDDFT calculations showing that the model systems, contributing together to the description of the random polymeric structure, exhibited different calculated excitation energies, that cover a broader portion of the absorption spectrum. In BHJ solar cells, the broadness of the absorption strongly influences the BHJ solar cell performances of P2 compared to P1 leading to higher short circuit currents and to a 3-fold higher power conversion efficiency. The PCE value (0.6%) obtained with P2 is in line with those obtained for other poly(heteroarylene−vinylene)s donors and is amenable to improvement by optimizing the device construction (PC61BM amount in the blend or use of annealing processes). These results demonstrate how combination of a suitable choice of the sequence of aryl units together with the potentialities offered by random polymers, can be useful tools in the design of new light-harvesting polymers in BHJ.

Extensive intramolecular π-conjugation is considered to be requisite in the design of organic semiconductors. Here, two inkjet pigments, epindolidione and quinacridone, that break this design rule are explored. These molecules afford intermolecular π-stacking reinforced by hydrogen-bonding bridges. Air-stable organic field effect transistors are reported that support mobilities up to 1.5 cm2/Vs with T80 lifetimes comparable with the most stable reported organic semiconducting materials.

The initiation of the Suzuki cross-coupling polymerisation with a fluorene-based AB-type monomer was finely tuned within the chain-growth regime by the suitable control of the species generated by the Pd(AcO)2/t-Bu3P/K3PO4 catalytic system. The prototypical poly(9,9-di-n-octyl-fluorene) was obtained with extremely fast (1 min) polymerisation rates, excellent polydispersities (1.16) and molecular weights dependent on the monomer/catalyst molar ratio, without the need to resort to formal chain-initiators.

OFETs based on new solution-processed ester functionalized 9,10-ter-anthrylene-ethynylenes show a mobility increase of four orders of magnitude, leading to mobilities as high as 4.9 × 10-2 cm 2 V-1 s-1 if the deposited film is annealed before contact deposition. The behavior is ascribed to an increase in film order at the dielectric/semiconductor interface as revealed by X-ray studies.

The manuscript deals with the synthesis and properties of four new all-donor alternating poly(arylene-ethynylene)s DBSA, DBSTA, DTSA, and DTSTA. The polymers have been obtained by a Sonogashira cross-coupling of 9,10-diethynyl-anthracene with the dibromo-derivatives of 9,9-dioctyldibenzosilole (DBSA), 2,7-dithienyl-9,9-dioctyl-dibenzosilole (DBSTA), 4,4-dioctyl-dithienosilole (DTSA), or 2,6-dithienyl-9,9dioctyl-dithienosilole (DTSTA). The polymers exhibited absorption profiles and frontier orbital energies strongly dependent on their primary structure. Density functional theory calculations confirmed experimental observations and provided an insight into the electronic structure of the macromolecules. In particular, the effects exerted by the thiophene units in DBSTA and DTSTA on the optical properties of the corresponding INTRODUCTION The p-conjugated polymers have widely been employed as light-harvesting electron donor materials in bulk heterojunction (BHJ) solar cells, since they can be suitably designed to provide the necessary light harvesting as well as a favorable mixing with fullerene-based electron acceptors. 1 An ideal donor material for BHJ solar cells should possess the following requisites: (i) a broad absorption spectrum in the range of wavelengths where the solar photon flux is maximum (i.e., 500–800 nm); (ii) a thermodynamically feasible electron transfer to the acceptor materials (usually fullerene derivatives); (iii) an efficient hole transport; (iv) a relatively deep highest occupied molecular orbital (HOMO) energy. All these properties independently influence polymers could be rationalized with respect to DBSA and DTSA. Preliminary photovoltaic measurements have established that the performance of DTSA is among the highest reported for an all-donor polymer. Moreover, UV irradiation of DTSA films under air evidenced a remarkable photostability of this material, providing further evidence that ethynylenecontaining electron-rich systems are promising donors for organic solar cells applications.

This study deals with the synthesis and characterization of two new di-anchoring dyes for applications in dye-sensitized solar cells. The materials were designed with a branched D(-π-A)2 structure containing (i) a rigid alkyl-functionalized carbazole core as the donor part, (ii) one (DYE1) or two (DYE2) thiophene units as the π-bridge and (iii) a cyano-acrylic moiety as acceptor and anchoring part. Electrochemical impedance spectroscopy indicated that the injected electron lifetime is higher in the case of DYE2, probably due to the length of the π-spacer that, in combination with the alkyl chain on the carbazole unit, hampers the charge recombination with the electrolyte. Stability tests on TiO2-sensitized films revealed that the di-anchoring remarkably slows down the desorption process, which conversely is evident for classic reference dyes. The highest power conversion efficiency reaches 5.01% in the case of DYE2 with a photovoltage of 0.70 V and a photocurrent of 10.52 mA cm−2, substantially deriving from a broader absorption with respect to DYE1, as also confirmed by IPCE measurements. These results support the efforts aimed at the structural engineering of D(-π-A)2 dyes to design new, more efficient and stable organic sensitizers.

This study deals with an investigation of the spectral stability of differently structured polyfluorenes (PFs), deprived of 9-H defects, embodying 9,9-dialkylfluorene (P1), 9,9-diarylfluorene (P2), or 9,9-diarylfluorene/9,9- dibenzylfluorene units in a 1:1 alternating fashion (P3). Thermal annealing or UV irradiation carried out on films of P1-P3 in air revealed that their typical blue photoluminescence is invariably stained, independently of their 9-substitution, by the appearance of the low-energy band (g-band) pointing out a remarkable effect of light on the degradation process. A more comprehensive picture of the degradation pathway is proposed, including as key step a light-promoted formation of a PF radical cation generated by aerobic oxidation (photoluminescence test) or p-doping (cyclic voltammetry test). The blue emission of P1-P3 could successfully be preserved by dispersing them into a higher band gap matrix, such as polyvinylcarbazole (PVK), indicating a fundamental role of the intermolecular interactions between PF chains in the appearance of the low-energy emission band. Comparison between the optical behavior of suitably prepared PFs containing either fluorenone moieties (PFK) or 9-(bis-methylsulfanyl-methylene)fluorene moieties (PFS) holds regions of planarity within the PF backbone (inducing local intermolecular interactions) and not the fluorenone charge-transfer emission as responsible of the g-band of degraded PFs.

Among the metal oxide semiconductors, ZnO has been widely investigated as a channel in thin film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution processed techniques. Herein, we are reporting a solution processable ZnO based thin-film transistor, gated through a liquid electrolyte having an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate buffer solution (PBS), are discussed in terms of operation stability and electrical performance of the ZnO TFT devices. Improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in ZnO lattice, possibly due to Na+ doping. Moreover, dissolution kinetics of ZnO thin film in liquid electrolyte opens to possible applicability of these devices as active element in “transient” implantable systems.