Tunneling magnetoresistance with sign inversion in junctions based on iron oxide nanocrystal superlattices

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Abstract

Magnetic tunnel junctions sandwiching a superlattice thin film of iron oxide nanocrystals (NCs) have been investigated. The transport was found to be controlled by Coulomb blockade and single-electron tunneling, already at room temperature. A good correlation was identified to hold between the tunnel magnetoresistance (TMR), the expected magnetic properties of the NC arrays, the charging energies evaluated from current-voltage curves, and the temperature dependance of the junction resistance. Notably, for the first time, a switching from negative to positive TMR was observed across the Verwey transition, with a strong enhancement of TMR at low temperatures.

Autore Pugliese

Tutti gli autori

  • Lekshmi C.I.; R. Buonsanti; C. Nobile; R. Rinaldi; P.D. Cozzoli; G. Maruccio

Titolo volume/Rivista

ACS nano

Anno di pubblicazione

2011

ISSN

1936-0851

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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