Abstract

The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm(2) for E=1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes.

Autore Pugliese

• Cola Adriano , Persano Anna , Quaranta Fabio , Martucci Maria Concetta , Creti' Pasquale , Siciliano Pietro Aleardo

Tutti gli autori

• Persano A.; Quaranta F.; Martucci M.C.; Creti P.; Siciliano P.; Cola A.

Titolo volume/Rivista

Journal of applied physics

Anno di pubblicazione

2010

ISSN

0021-8979

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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