Abstract

In Ar-rich Ar-H2-CH4 gas mixture the presence of H2 is found to be beneficial to the plasma stability. On the other hand, too high H2 percentages lead to materials showing a high surface roughness. In the present work, diamond films were grown on p-type Si (100) substrates screening different quantities of H2. The plasma phase and plasma-substrate interface were investigated by in-situ optical emission spectroscopy and pyrometric interferometry to determine the behavior of emitting species and the deposition rates, respectively.The obtained films were characterized by Raman micro-spectroscopy, AFM and SEM techniques. For H2 percentages between 6.3 and 10%, the structure and morphology are characteristic of nanocrystalline films, affording low roughness values when a buffer layer was grown between the diamond coating and the treated silicon surface.

Autore Pugliese

• Cicala Grazia

Tutti gli autori

• G. Cicala ; D. Monéger ; D. Cornacchia ; P.Pesce ; V. Magaletti ; G. Perna ; V. Capozzi ; M. Tamborra

Titolo volume/Rivista

Surface & coatings technology

Anno di pubblicazione

2012

ISSN

0257-8972

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

Non Disponibile