Abstract

Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.

Autore Pugliese

• Cola Adriano , Persano Anna , Taurino Antonietta , Quaranta Fabio , Siciliano Pietro Aleardo

Tutti gli autori

• Quaranta F.; Persano A.; Capoccia G.; Taurino A.; Cola A.; Siciliano P.; Lucibello A.; Marcelli R.; Proietti E.; Bagolini A.; Margesin B.; Bellutti P.; Iannacci J.

Titolo volume/Rivista

Proceedings of SPIE

Anno di pubblicazione

2015

ISSN

1996-756X

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

Non Disponibile