Abstract

Undoped and in particular Nitrogen-doped (N-doped) diamond films are interesting materials for photo- and thermo-emission applications such as photocathodes, cold cathodes in vacuum microelectronics, cathode neutralizers in thrusters for space propulsions and energy converters in solar concentrating systems. In the present contribution, these films were produced by microwave plasma enhanced chemical vapour deposition technique starting from CH4-H2 gas mixture and adding variable nitrogen amount from 0 to 6 %. The deposition rate of films, monitored in-situ by pyrometric and laser interferometries, changes drastically with the increasing nitrogen addition. The chemical-structural, morphological, electrical and photoemissive properties of films were determined by XPS, Raman and photoluminescence spectroscopies, atomic force microscopy, two points technique for I-V characteristics and photoemission measurements, respectively. The examined films exhibit an evolution of structural-chemical features, and of electrical and photoemissive properties as a function of the nitrogen added to the gas mixture. Specifically the photoemission quantum efficiency, a merit figure for photocathodes, was assessed in the UV range (140-250 nm) for all the samples before and after microwave plasma treatments in H2 or N2 gases, and after successive air exposure.

Autore Pugliese

• Cicala Grazia

Tutti gli autori

• G. Cicala; L. Velardi; A. Valentini

Titolo volume/Rivista

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Anno di pubblicazione

2016

ISSN

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ISBN

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Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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