Abstract

Ni-Si reaction and alpha-Si crystallization on polyimide were simultaneously induced by excimer laser annealing. A similar to 8 nm Ni film was deposited on Si in such a way that Ni atoms were also distributed within the alpha-Si layer. The role of Ni atoms during crystallization and surface silicidation was studied in the submelting regime and modeled by diffusion-reaction equations. It has been found that the starting Ni distribution in alpha-Si and the thermal gradient due to the plastic were crucial to induce Si crystallization. At a threshold of similar to 0.2 J/cm(2) melting is induced in the polycrystalline silicon layer and in the residual alpha-Si.

Autore Pugliese

• Cuscuna' Massimo

Tutti gli autori

• Alberti A.; La Magna A.; Cuscuna M.; Fortunato G.; Privitera V.

Titolo volume/Rivista

Applied physics letters

Anno di pubblicazione

2010

ISSN

0003-6951

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

Ultimo Aggiornamento Citazioni

Non Disponibile

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile