Abstract

InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10-12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1-x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template. (C) 2014 AIP Publishing LLC.

Autore Pugliese

• Losurdo Maria

Tutti gli autori

• Kong W.; Mohanta A.; Roberts A. T.; Jiao W. Y.; Fournelle J.; Kim T. H.; Losurdo M.; Everitt H. O.; Brown A. S.

Titolo volume/Rivista

Applied physics letters

Anno di pubblicazione

2014

ISSN

0003-6951

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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