Abstract

The electrical activation of B+ implanted at 20keV with a fluence of 1x10(15)cm(-2) in crystalline Ge, following a laser annealing (=308nm) with multipulses (1, 3, or 10), was studied. Incomplete activation was observed for all the irradiated samples. The inactivation of B was correlated to the presence of oxygen, coming from the native germanium oxide. The formation of B-O complexes occurs during the solidification of the Ge, hampering the substitutionality and the electrical activation of the dopant. We estimated the diffusivity of oxygen in liquid Ge, approximate to 3x10(-5)cm(2)s(-1), by fitting the experimental O concentration profiles. These studies clarify the key role played by oxygen on the electrical activation of B in Ge by laser annealing, and have to be considered for the fabrication of junctions in advanced scaled Ge-based devices. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Autore Pugliese

• Cuscuna' Massimo

Tutti gli autori

• Impellizzeri G.; Napolitani E.; Milazzo R.; Boninelli S.; Cuscuna M.; Fisicaro G.; La Magna A.; Fortunato G.; Priolo F.; Privitera V.

Titolo volume/Rivista

Physica status solidi. A, Applications and materials science

Anno di pubblicazione

2014

ISSN

1862-6300

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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