Abstract

In this paper, the reliability of shunt capacitive radiofrequency microelectromechanical systems switches developed onGaAs substrate using a III-V technology fabrication process,which is fully compatible with standard monolithic microwaveintegrated circuit fabrication, is investigated. A comprehensivecycling test is carried out under the application of different unipolarand bipolar polarization waveforms in order to infer howthe reliability of the realized capacitive switches, which is stilllimited with respect to the silicon-based devices due to the lessconsolidation of the III-V technology, can be improved. Underthe application of unipolar waveforms, the switches show a shortlifetime and a no correct deactuation for positive pulses longerthan ~10 ms probably due to the charging phenomena occurringin the dielectric layer underneath the moveable membrane. Thesecharging effects are found to vanish under the application ofa waveform including consecutive positive and negative voltagepulses, provided that proper durations of the positive and negativevoltage pulses are used. Specifically, a correct switch deactuationand a lifetime longer than 1 million cycles, being this value limitedby the duration of the used testing excitation, are achieved byapplying a 1-kHz waveform with 20-?s-long positive and negativeconsecutive pulses.

Autore Pugliese

• Cola Adriano , Persano Anna , Quaranta Fabio , Siciliano Pietro Aleardo

Tutti gli autori

• Persano A.; Tazzoli A.; Cola A.; Siciliano P.; Meneghesso G.; Quaranta F.

Titolo volume/Rivista

Journal of microelectromechanical systems

Anno di pubblicazione

2012

ISSN

1057-7157

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

Ultimo Aggiornamento Citazioni

Non Disponibile

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile