Real time studies of In-adlayer during PAMBE of InGaN/GaN MQWs

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Abstract

The control of In adlayer during plasma-assisted molecular beam epitaxy (PAMBE) of InGaN/GaN multiquantum wells (MQWs) is critical to achieve good structural and optical properties. This contribution focuses on the investigation by real-time spectroscopic ellipsometry, corroborated by reflection high energy electron diffraction (RHEED), of In adlayer during the PAMBE growth of InGaN/GaN MQWs. The ellipsometric data reveal In accumulation during InGaN growth, which results in thicker quantum well than designed. We address the effect of the indium adlayer on the growth of InGaN/GaN with an indium composition between 7% and 13%, and on their optical and structural properties determined by high-resolution X-ray diffraction and photoluminescence

Autore Pugliese

Tutti gli autori

  • T.H. Kim; M. Losurdo; S. Choi; I. Yoon; G. Bruno; A. Brown

Titolo volume/Rivista

Physica status solidi. C, Current topics in solid state physics

Anno di pubblicazione

2012

ISSN

1862-6351

ISBN

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Settori ERC

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Codici ASJC

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