Abstract

High angle annular dark field (HAADF) scanning transmission electron microscopy has demonstrated the capability to achieve sub-Angstrom resolution in the study of the structure of materials Furthermore, the sensitivity of HAADF imaging to fine variations of the chemistry of the specimen allows one to derive the relevant chemical map from the intensity distribution in an image Here, a general approach to calculate the HAADF image intensity for an alloy is derived and applied to experimental images to measure quantitatively the distribution of the chemical species The calculations of HAADF image contrast have been performed by multi-slice methods in the framework of the frozen-phonon approximation by developing and using a parallel code to strongly reduce the computing time necessary to obtain a reliable simulation of realistic specimens The parameters that influence the HAADF image contrast have been studied and their role has been quantified Experimental examples of quantification of the chemistry of semiconducting heterostructures will be shown Attention will be focused on the different parameters that influence the HAADF image contrast depending on the material system and on the specimen composition

Autore Pugliese

• Carlino Elvio

Tutti gli autori

• Carlino E.

Titolo volume/Rivista

Journal of physics. Conference series

Anno di pubblicazione

2010

ISSN

1742-6588

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

Non Disponibile

Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

Non Disponibile