Abstract

This paper reports on the growth of Si nanowires (NWs) by SiH4/H2 plasmas using the non-noble Gananoparticles(NPs) catalysts. A comparative investigation of conventional Si-NWs vapour-liquid-solid(VLS) growth catalyzed by Au NPs is also reported. We investigate the use of a hydrogen plasma and of aSiH4/H2 plasma for removing Ga oxide shell and for enhancing the Si dissolution into the catalyst, respectively.By exploiting the Ga NPs surface plasmon resonance (SPR) sensitivity to their surface chemistry,the SPR characteristic of Ga NPs has been monitored by real time spectroscopic ellipsometry in orderto control the hydrogen plasma/Ga NPs interaction and the involved processes (oxide removal and NPsdissolution by volatile gallium hydride). Using in situ laser reflectance interferometry the metal catalyzedSi NWs growth process has been investigated to find the effect of the plasma activation on the growthkinetics. The role of atomic hydrogen in the NWs growth mechanism and, in particular, in the SiH4 dissolutioninto the catalysts, is discussed. We show that while Au catalysts because of the re-aggregationof NPs yields NWs that do not correspond to the original size of the Au NPs catalyst, the NWs grown bythe Ga catalyst retains the diameter dictated by the size of the Ga NPs. Therefore, the advantage of GaNPs as catalysts for controlling NWs diameter is demonstrated.

Autore Pugliese

• Bianco Giuseppe Valerio , Losurdo Maria , Giangregorio Maria Michela

Tutti gli autori

• G.V. Bianco; M. M. Giangregorio; P. Capezzuto; M. Losurdo; T.H. Kim; A.S. Brown; G. Bruno

Titolo volume/Rivista

Materials science & engineering. B, Solid-state materials for advanced technology

Anno di pubblicazione

2012

ISSN

0921-5107

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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