Abstract

High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a similar to 10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (similar to 35 ps) along with a slow decaying persistent photocurrent (similar to 80 s). The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects.

Autore Pugliese

• Prete Paola

Tutti gli autori

• Gallo E.M.; Chen G.; Currie M.; McGuckin T.; Prete P.; Lovergine N.; Nabet B.; Spanier J.E.

Titolo volume/Rivista

Applied physics letters

Anno di pubblicazione

2011

ISSN

0003-6951

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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