Abstract

Conductivity and photoconductivity properties of individual GaAs/AlGaAs core-shellnanowires (NWs) are reported. The NWs were grown by Au-assisted metalorganic vaporphase epitaxy, and then dispersed on a substrate where electrical contacts were defined on theindividual NWs by electron beam induced deposition. Under dark conditions, the carriertransport along the NW is found to be limited by Schottky contacts, and influenced by thepresence of an oxide layer. Nonetheless, under illumination, the GaAs/AlGaAs core-shell NWshows a significant photocurrent, much higher than the bare GaAs NW. The spatialdependence of the photocurrent within the single core-shell NW, evaluated by a mappingtechnique, confirms the blocking behavior of the contacts. Moreover, local spectralmeasurements were performed which allow one to discriminate the contribution of carriersphotogenerated in the core and in the shell.

Autore Pugliese

• Cola Adriano , Persano Anna , Taurino Antonietta , Prete Paola

Tutti gli autori

• Persano A.; Taurino A.; Prete P.; Lovergine N.; Nabet B.; Cola A.

Titolo volume/Rivista

Nanotechnology

Anno di pubblicazione

2012

ISSN

1361-6528

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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