Abstract

Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster-~6 ps for a cathode-anode separation of 1.3 ?m and ~12 ps for distances more than 3 ?m. © 2013 by the authors; licensee MDPI, Basel, Switzerland.

Autore Pugliese

• Cola Adriano , Persano Anna , Quaranta Fabio

Tutti gli autori

• Currie M.; Dianat P.; Persano A.; Martucci M.C.; Quaranta F.M.; Cola A.; Nabet B.

Titolo volume/Rivista

Sensors

Anno di pubblicazione

2013

ISSN

1424-8220

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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