Abstract

Nickel enhanced amorphous Si crystallization and silicidation on polyimide were studied during multipulse excimer laser annealing (ELA) from submelting to melting conditions. A similar to 8 nm thick Ni film was deposited on a 100 nm thick alpha-Si layer at similar to 70 degrees C in order to promote partial nickel diffusion into silicon. In the submelting regime, Ni atoms distributed during deposition in alpha-Si and the thermal gradient due to the presence of the plastic substrate were crucial to induce low fluence (>= 0.08 J/cm(2)) Si crystallization to a depth which is strictly related to the starting Ni profile. Amorphous-Si crystallization is not expected on pure Si at those low fluences. Additional pulses at higher fluences do not modify the double poly-Si/alpha-Si structure until melting conditions are reached. At a threshold of similar to 0.2 J/cm(2), melting was induced simultaneously in the polycrystalline layer as well as in the residual alpha-Si due to a thermal gradient of similar to 200 degrees C. Further increasing the laser fluence causes the poly-Si layer to be progressively melted to a depth which is proportional to the energy density used. As a consequence of the complete Si melting, columnar poly-Si grains are formed above 0.3 J/cm(2). For all fluences, a continuous NiSi2 layer is formed at the surface which fills the large Si grain boundaries, with the beneficial effect of flattening the poly-Si surface. The results would open the perspective of integrating Ni-silicide layers as metallic contacts on Si during alpha-Si-crystallization by ELA on plastic substrate.

Autore Pugliese

• Cuscuna' Massimo

Tutti gli autori

• Alberti A.; La Magna A.; Cuscunà M.; Fortunato G.; Spinella C.; Privitera V.

Titolo volume/Rivista

Journal of applied physics

Anno di pubblicazione

2010

ISSN

0021-8979

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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