Abstract

The growth and properties of alloys in the alternative quaternary alloy system GaAs1yzPyBizwere explored. This materials system allows simultaneous and independent tuning of latticeconstant and band gap energy, Eg, over a wide range for potential near- and mid-infrared optoelectronicapplications by adjusting y and z in GaAs1yzPyBiz. Highly tensile-strained, pseudomorphicfilms of GaAs1yPy with a lattice mismatch strain of 1.2% served as the host for the subsequentaddition of Bi. Lattice-matched alloy materials to GaAs were generated by holding y3.3z inGaAs1yzPyBiz. Epitaxial films with both high Bi content, z0.0854, and a smooth morphologywere realized with measured band gap energies as low as 1.11-1.01 eV, lattice-matched to GaAssubstrates. Density functional theory calculations are used to provide a predictive model for theband gap of GaAs1yzPyBiz lattice-matched to GaAs.

Autore Pugliese

• Losurdo Maria

Tutti gli autori

• K. Forghani; Y. Guan; M. Losurdo; G. Luo; D. Morgan; S.E. Babcock; A.S. Brown; L. J. Mawst; T.F. Kuech

Titolo volume/Rivista

Applied physics letters

Anno di pubblicazione

2014

ISSN

0003-6951

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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