Fabrication at wafer level of miniaturized gas sensors based on SnO(2) nanorods deposited by PECVD and gas sensing characteristics

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Abstract

SnO(2) nanorods were successfully deposited on 3" Si/SiO(2) wafers by inductively coupled plasma-enhanced chemical vapour deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shaped SnO(2) nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160-300 nm. The SnO(2)-nanorods based gas sensors were tested towards NH(3) and CH(3)OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO(2) thin films gas sensors.

Autore Pugliese

Tutti gli autori

  • Forleo A.; Francioso L.; Capone S.; Casino F.; Siciliano P.; Tan O.K.; Hui H.

Titolo volume/Rivista

Sensors and actuators. B, Chemical

Anno di pubblicazione

2011

ISSN

0925-4005

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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