Abstract

In this work, we analyze the pressure sensing of a thin film molybdenum/aluminumnitride/molybdenum (Mo/AlN/Mo) microwave/RF MEMS filter fabricated by a simple technology. After an experimental characterization in a frequency range between 1 and 36 GHz, we focused on the piezoelectric effect due to the stress properties of the piezoelectric AlN layer by applying forces by means of weights. Variations in the bandpass region of the microwave/RF filter are observed by proving high sensitivity also for low applied weights. We check by a properly designed three-dimensional (3D) finite-element method (FEM) tool the pressure-sensing property of the proposed device. Finally, we analyze the bad gap property of a chip with central defect around 40 GHz. © Copyright 2011 Cambridge University Press and the European Microwave Association.

Autore Pugliese

• Passaseo Adriana Grazia

Tutti gli autori

• Massaro A.; Venanzoni G.; Farina M.; Morini A.; Rozzi T.; Cingolani R.; Passaseo A.; De Vittorio M.

Titolo volume/Rivista

International journal of microwave and wireless technologies

Anno di pubblicazione

2011

ISSN

1759-0787

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

Ultimo Aggiornamento Citazioni

Non Disponibile

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile