Electrical transport features of SiNWs random network on Si support after covalent attachment of new organic functionalities
Abstract
Modification of the electrical transport of arandom network of silicon nanowires assembled on n-silicon support, after silicon nanowires functionalization by chlorination/alkylation procedure , is here described and discussed. We show that the organic functionalities induce charge transfer at single SiNW and produce doping-like effect that is kept in the random network too. The SiNWs network also presents a surface recombination velocity lower than that of bulk silicon. Interestingly, the functionalized silicon nanowires/n-Si junctions display photo-yield and open circuit voltages higher than those including oxidized silicon nanowire networks. Electrical properties stability in time of junctions embedding propenyl terminated siliconnanowires network and transport modification aftersecondary functionalization is also shown. These results suggest a possible route for the integration of functionalized Si nanowires, although randomly distributed, in stable large areasensitive based devices.
Autore Pugliese
Tutti gli autori
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M. Ambrico ; P.F. Ambrico; R. di Mundo
Titolo volume/Rivista
Nanomaterials and Nanotechnology
Anno di pubblicazione
2012
ISSN
1847-9804
ISBN
Non Disponibile
Numero di citazioni Wos
Nessuna citazione
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Settori ERC
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Codici ASJC
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