Abstract

A detailed study of the electrical properties of planar AlGaN/GaN Schottky diodes is presented, the focus being on the role of the two dimensional electron gas (2DEG) depletion and the diodes non-idealities in different voltage regimes. The 2DEG depletion behavior is inferred from the analysis of capacitance and current measurements with transition from vertical to lateral diode operation occurring at Vpinch-off =4V. In particular, the sub-micrometer depletion width, laterally extending from the edge of the Schottky contact under high reverse voltages, is evaluated on the basis of a simple fringe capacitance model. Current transport mechanisms are discussed, investigating the interrelation between 2DEG, Poole-Frenkel effect, and defects. With regard to defects, the role of dislocations in the AlGaN/GaN diode non-idealities, usually interpreted in terms of Schottky barrier inhomogeneities, is critically addressed. Photocurrent spatial mapping under high reverse voltage points out the not uniform electric field distribution around the Schottky contact and highlights the presence of local photo-conductive paths, likely associated with the dislocations near the edge of the Schottky contact. Published by AIP Publishing.

Autore Pugliese

• Persano Anna , Tasco Vittorianna

Tutti gli autori

• Persano A.; Pio I.; Tasco V.; Cuscuna M.; Passaseo A.; Cola A.

Titolo volume/Rivista

Journal of applied physics

Anno di pubblicazione

2017

ISSN

0021-8979

ISBN

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Nessuna citazione

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Settori ERC

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Codici ASJC

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