Abstract

ZnO thin films, prepared using a printing-compatible sol-gel method involving a thermal treatmentbelow 400 °C, are proposed as active layers in water-gated thin-film transistors (WG-TFTs). Thethin-film structure and surface morphology reveal the presence of contiguous ZnO crystalline(hexagonal wurtzite) with isotropic nano-grains as large as 10nm characterized by a preferentialorientation along the a-axis. The TFT devices are gated through a droplet of deionized waterby means of electrodes characterized by different work functions. The high capacitance ofthe electrolyte allowed operation below 0.5V. While the Ni, Pd, Au and Pt gate electrodes areelectrochemically stable in the inspected potential range, electrochemical activity is revealed for theW one. Such an occurrence leads to an increase of capacitance (and current), which is ascribed to ahigh output current from the dissolution of a lower capacitance W-oxide layer. The environmentalstability of the ZnO WG-TFTs is quite good over a period of five months

Autore Pugliese

• Giannini Cinzia , Altamura Davide

Tutti gli autori

• M. Singh; M.Y. Mulla; M.V. Santacroce; M. Magliulo; C. Di Franco; K. Manoli; D. Altamura; C. Giannini; N. Cioffi; G. Palazzo; G. Scamarcio; L. Torsi

Titolo volume/Rivista

Journal of physics. D, Applied physics

Anno di pubblicazione

2016

ISSN

0022-3727

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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