Abstract

In this paper, shunt capacitive RF microelectromechanical systems (MEMS) switches are developed in III-V technology using tantalum nitride (TaN) and tantalum pentoxide (Ta2O5) for the actuation lines and the dielectric layers, respectively. A compositional, structural, and electrical characterization of the TaN and Ta2O5 films is preliminarily performed, demonstrating that they are valid alternatives to the conventional materials used in III-V technology for RF MEMS switches. Specifically, it is found that the TaN film resistivity can be tuned from 0.01 to 30 ohmcm . cm by changing the deposition parameters. On the other hand, dielectric Ta2O5 films show a low leakage-current density of few nanoamperes per square centimeter for E similar to 1 MV/cm, a high breakdown field of 4 MV/cm, and a high dielectric constant of 32. The realized switches show good actuation voltages, in the range of 15-20 V, an insertion loss better than -0.8 dB up to 30 GHz, and an isolation of similar to -40 dB at the resonant frequency, which is, according to bridge length, between 15 and 30 GHz. A comparison between the measured S-parameter values and the results of a circuit simulation is also presented and discussed, providing useful information on the operation of the fabricated switches.

Autore Pugliese

• Cola Adriano , Persano Anna , Taurino Antonietta , Quaranta Fabio , Siciliano Pietro Aleardo

Tutti gli autori

• Persano A.; Cola A.; De Angelis G.; Taurino A.; Siciliano P.; Quaranta F.

Titolo volume/Rivista

Journal of microelectromechanical systems

Anno di pubblicazione

2011

ISSN

1057-7157

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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