Abstract

In this work, we demonstrate a fully integrated three-axis Hall magnetic sensor by exploitingmicrofabrication technologies applied to a GaAs-based heterostructure. This allows us toobtain, by the same process, three mutually orthogonal sensors: an in-plane Hall sensor andtwo out-of-plane Hall sensors. The micromachined devices consist of a two-dimensionalelectron gas AlGaAs/InGaAs/GaAs multilayer which represents the sensing structure, grownon the top of an InGaAs/GaAs strained bilayer. After the release from the substrate, thestrained bilayer acts as a hinge for the multilayered structure allowing the out-of-planeself-positioning of devices. Both the in-plane and out-of-plane Hall sensors show a linearresponse versus the magnetic field with a sensitivity for current-biased devices higher than1000 V A-1 T-1, corresponding to an absolute sensitivity more than 0.05 V T-1 at 50 ?A.Moreover, Hall voltage measurements, as a function of the mechanical angle for both in-planeand out-of-plane sensors, demonstrate the potential of such a device for measurements of thethree vector components of a magnetic field.

Autore Pugliese

• Passaseo Adriana Grazia , Epifani Gianmichele , Todaro Maria Teresa , Tasco Vittorianna

Tutti gli autori

• Todaro M.T.; L. Sileo; G. Epifani; V. Tasco; R. Cingolani; M. De Vittorio; A. Passaseo

Titolo volume/Rivista

Journal of micromechanics and microengineering

Anno di pubblicazione

2010

ISSN

0960-1317

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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