Abstract

A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene) (pBTTT-C14) organic semiconductor (OSC). Different device configurations were evaluated and a bottom gate – top contact (BGTC) device was investigated as transducer for gas sensing measurements. The sensors׳ performance in terms of stability, repeatability and reproducibility were evaluated when the device was exposed to different concentrations of 1-butanol. Comparison with a conventionally gated OFET (SiO2 dielectric instead of PSSH) was also performed.

Autore Pugliese

• Palazzo Gerardo , Manoli Kyriaki , Torsi Luisa

Tutti gli autori

• PALAZZO G.;MANOLI K.;TORSI L.;MAGLIULO M.

Titolo volume/Rivista

Non Disponibile

Anno di pubblicazione

2014

ISSN

0959-8324

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

7

Ultimo Aggiornamento Citazioni

Non Disponibile

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile