Simulation of CNTFET Digital Circuits: a VERILOG-A Implementation

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Abstract

A Verilog-A compact model for Carbon NanoTube Field Effect Transistors (CNTFETs) has been implemented to study basic digital circuits. The model, based on the hypothesis of fully ballistic transport in a mesoscopic system between two non-reflective contacts, has been structured to allow an easy implementation in Verilog-A language and has been compared with experimental data, showing a good agreement between simulation and experimental results, particularly in the saturation region, where the relative error is practically negligible. Moreover the Verilog-A model has been utilized to design a digital NOT gate with complementary technology and a NAND gate, in which the quantum capacitance dependence on polarization voltages has been considered.

Autore Pugliese

Tutti gli autori

  • R. MARANI , PERRI A

Titolo volume/Rivista

INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES

Anno di pubblicazione

2012

ISSN

2076-734X

ISBN

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Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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