Abstract

We present a model of Carbon NanoTube Field Effect Transistors (CNTFETs) directly and easily implementable in simulation SPICE software for electronic circuit design. The model is based on analytical approximations and parameters extracted from quantum mechanical simulations of the device and depending on the nanotube diameter and on the oxide capacitance. The comparison of the simulated output and transfer characteristics with those of a numerical model available online and with experimental data shows a relative error less than 5% in both cases. In order to determine the values of CNTFET equivalent circuit elements, a new procedure, based on a best-fitting between the measured and simulated values of output device characteristics, has been proposed. To verify the versatility of the proposed model, we use it in the SPICE simulator to design some A/D electronic circuits, demonstrating the importance of the quantum capacitance dependence on polarization voltages and examining the effects of the CNT quantum resistances.

Autore Pugliese

• Perri Anna Gina

Tutti gli autori

• MARANI R , GELAO G , PERRI A

Titolo volume/Rivista

MICROELECTRONICS JOURNAL

Anno di pubblicazione

2013

ISSN

0959-8324

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

14

Ultimo Aggiornamento Citazioni

2017-04-23 03:20:56

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile