Abstract

In this paper we review an analytical electrothermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. The model allows to optimize the device layout through the solution of the non-linear 3-D heat equation. The thermal solution is achieved by the Kirchhoff transform and the 2-D Fourier transform. Moreover the model is independent on the specific physical properties of the layers, hence GaAs FETs, HBT and HEMTs can be analysed. The model has been applied to characterize the electrical and thermal performances of a multifinger GaAs FET and of a Si/SiGe Heterojunction Bipolar Transistor.

Autore Pugliese

• Perri Anna Gina

Tutti gli autori

• R. Marani , Perri A

Titolo volume/Rivista

INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY

Anno di pubblicazione

2013

ISSN

2231-1963

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

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Numero di citazioni Scopus

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Ultimo Aggiornamento Citazioni

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Settori ERC

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Codici ASJC

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