A COMPARISON OF I-V MODELS FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

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Abstract

In this paper we present a comparison among I-V models of CNTFETs proposed in literature in order to determine the model more easily implementable in simulation software for electronic circuit design. We have compared the CNTFETs model, already proposed by us, with Deng-Wong’s and Koswatta’s models. In particular our model, already structured to implement in simulator software, has been modified to characterize the I-V characteristics of CNTFETs below threshold. In this way it has been possible to have a more complete comparison, because the examined models consider the behaviour of device in sub-threshold regime.In spite of other models, our model seems to allow an easier implementation in the computer aided design of the most common analogue and digital circuits, showing a good agreement between the experimental and simulated characteristics, with processing times practically instant.

Autore Pugliese

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  • R. Marani , Perri A

Titolo volume/Rivista

INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY

Anno di pubblicazione

2014

ISSN

2231-1963

ISBN

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Nessuna citazione

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Settori ERC

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Codici ASJC

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