A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors oriented to Simulation Software

Torna indietro

Abstract

We present a compact, semi-empirical model of Carbon Nanotube Field Effect Transistors (CNTFETs) directly and easily implementable in simulation software. A new procedure, based on a best-fitting between the measured and simulated values of output device characteristics, is proposed in order to extract the optimal values of the CNTFET equivalent circuit elements. To verify the versatility of the proposed model, we use it in circuit simulators to design some electronic circuits. In particular we investigate about the effects of the CNT quantum resistances and inductances, then demonstrating their role for both analog and digital applications at frequencies over about ten THz.

Autore Pugliese

Tutti gli autori

  • MARANI R , PERRI A

Titolo volume/Rivista

CURRENT NANOSCIENCE

Anno di pubblicazione

2011

ISSN

1573-4137

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

18

Ultimo Aggiornamento Citazioni

2017-04-23 03:20:56

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile