Abstract

Advances in silicon photonics have resulted in rapidly increasing complexity in integrated circuits. New methods that allow the direct characterization of individual optical components in situ, without the need for additional fabrication steps or test structures, are desirable. Here, we present a device-level method for the characterization of photonic chips based on a highly localized modulation in the device using pulsed laser excitation. Optical pumping perturbs the refractive index of silicon, providing a spatially and temporally localized modulation in the transmitted light, enabling time- and frequencyresolved imaging. We demonstrate the versatility of this all-optical modulation technique in imaging and in the quantitative characterization of a range of properties of silicon photonic devices, from group indices in waveguides, to quality factors of a ring resonator, and to the mode structure of a multimode interference device. Ultrafast photomodulation spectroscopy provides important information on devices of complex design, and is easily applicable for testing at the device level.

Autore Pugliese

• Passaro Vittorio

Tutti gli autori

• PASSARO, Vittorio , R. BRUCK , B. MILLS , B. TROIA , D.J. THOMSON , F.Y. GARDES , Y. HU , G.Z. MASHANOVICH , G.T. REED , O.L. MUSKENS

Titolo volume/Rivista

NATURE PHOTONICS

Anno di pubblicazione

2014

ISSN

1749-4885

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

12

Ultimo Aggiornamento Citazioni

2017-04-23 03:20:56

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile