A Finite Element Approach to Analyze the Thermal Effect of Defects on Silicon-Based PV Cells

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Abstract

The paper introduces the issue of the typical defects in PhotoVoltaic (PV) cells and focuses the attention on three specific defects: linear edge shunt, hole and conductive intrusion. These defects are modeled by means of Finite Element Method (FEM) and implemented in Comsol Multiphysics environment in order to analyze the temperature distribution in the whole defected PV cell. All the three typologies of Silicon-based PV cells are considered: mono-crystalline, poly-crystalline and amorphous. Numerical issues (simulation times, degrees of freedom, mesh elements and grid dependence analysis) are reported.

Autore Pugliese

Tutti gli autori

  • S.Vergura , Acciani G , O.Falcone

Titolo volume/Rivista

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

Anno di pubblicazione

2012

ISSN

0278-0046

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

19

Ultimo Aggiornamento Citazioni

2017-04-23 03:20:56

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile