Abstract

Indium monoselenide (InSe) nanowires were grown by the thermal evaporation method in argon atmosphere without the presence of any catalysts using InSe polycrystalline powder as the source material. No nanostructure growth was observed at deposition temperatures below 580 °C. The nanostructures were discernable at temperatures above 620 °C. Pure InSe nanowires were obtained at the deposition temperature of 660 °C for 50 min. The diameters of the nanowires were from 50 to 240 nm and their lengths were up to several micrometers. X-ray diffraction spectrum reveals that the synthesized products were single-crystalline of the β-phase hexagonal structure of InSe with lattice constants a = 4.006 Å and c = 16.642 Å. The strong peak due to the reflection from the (004) crystal plane reveals that most nanowires grow with a strong preferred orientation

Autore Pugliese

• Genga Alessandra , Siciliano Tiziana

Tutti gli autori

• Siciliano T. , Tepore A. , Micocci G. , Genga A. , Siciliano M. , Filippo E.

Titolo volume/Rivista

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Anno di pubblicazione

2011

ISSN

0957-4522

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

8

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile