Abstract

The stoichiometry of single ternary III-V semiconductor nanowires was analyzed by Raman spectroscopy. Freestanding AlxGa1-xAs nanowires were obtained through Metal-Organic Vapor Phase Epitaxy (MOVPE) by the Vapor Liquid Solid (VLS) mechanism on GaAs substrates. The as-grown nanowires were studied with a scanning confocal Raman spectrometer (spatial resolution ca. 300 nm). They were located by Rayleigh imaging and selected for Raman measurements. The acquired spectra exhibit 2-mode behavior. The stoichiometry of individual nanowires was determined based on the frequencies of the GaAs- and AlAs-like TO and LO peaks with an accuracy of <10%. Measurements at different positions along the axis revealed variations of the composition within single nanowires. This non-uniformity indicates that the nanowires possess an internal structure.

Autore Pugliese

• Lovergine Nicola

Tutti gli autori

• B. Buick , E. Speiser , P. Prete , P. Paiano , N. Lovergine , W. Richter

Titolo volume/Rivista

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Anno di pubblicazione

2010

ISSN

0370-1972

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

Ultimo Aggiornamento Citazioni

Non Disponibile

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile