Abstract

High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a about 10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (ca. 35 ps) along with a slow decaying persistent photocurrent (ca. 80 s). The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects.

Autore Pugliese

• Lovergine Nicola

Tutti gli autori

• E. M. Gallo , G. Chen , M. Currie , T. McGuckin , P. Prete , N. Lovergine , B. Nabet , J. E. Spanier

Titolo volume/Rivista

APPLIED PHYSICS LETTERS

Anno di pubblicazione

2011

ISSN

1077-3118

ISBN

Non Disponibile

Numero di citazioni Wos

55

Ultimo Aggiornamento Citazioni

22/04/2018

Numero di citazioni Scopus

57

Ultimo Aggiornamento Citazioni

22/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile