On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures

Torna indietro

Abstract

We report on the growth of GaAs-AlGaAs core-multishell nanowire quantum heterostructures by metalorganic vapor phase epitaxy, and their photoluminescence (PL) properties. Dense arrays of vertically-aligned GaAs nanowires were fabricated onto (111)B-GaAs wafers by Au-catalyzed self-assembly, and radially overgrown by two AlGaAs shells between which a few-nm thin GaAs shell was introduced to form a quantum well tube (QWT). Besides the GaAs nanowire core emission band peaked at around 1.503 eV, 7K PL spectra showed an additional broad peak in the 1.556-1.583 eV energy interval, ascribed to the transition between electron and hole confined states within the QWT. The emission blue-shifts with the shrinkage of as-grown GaAs well tubes, as the nanowire local (on the substrate) density and height change.

Autore Pugliese

Tutti gli autori

  • Prete P. , Rosato R. , Stevanato E. , Marzo F. , Lovergine N.

Titolo volume/Rivista

PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING

Anno di pubblicazione

2015

ISSN

0277-786X

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

0

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile