Abstract

In this work, we report on the microstructural and morphological characterization of III-V semiconductor nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy. As-grown dense (10^8-10^9 cm^-2) arrays of few-micron long vertically-aligned (i.e. parallel to the <111> crystallographic axis) GaAs, AlxGa1-xAs and core-shell GaAs-AlxGa1-xAs NWs were investigated, carrying out HRXRD measurements on different (hkl) reflections and by recording reciprocal space maps (RSMs) around the materials (111) reciprocal lattice points (relps). We show that NW diffraction peaks are visible in the RSM by means of characteristic halos. In the case of GaAs NWs, the halo is located at the (111) relp indicating that the NWs are grown along the <111> direction and parallel to the <111> axis of the GaAs substrate. On the contrary, for AlxGa1-xAs NWs or intentional core-shell GaAs-AlxGa1-xAs NWs the halo is displaced (along the momentum transfer normal to the surface, Qz) with respect to the GaAs (111) relp due to the elastic lattice strain associated with the compositional variation, e.g. the Al molar fraction in the AlxGa1-xAs alloy, within the nanostructures.

Autore Pugliese

• Lovergine Nicola

Tutti gli autori

• D. Altamura , I. Miccoli , P. Prete , N. Lovergine , L. Tapfer

Titolo volume/Rivista

MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

Anno di pubblicazione

2011

ISSN

0272-9172

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

0

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile