Inner composition, defects and morphology of AlGaAs nanowire grown by Au-catalyzed MOVPE

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Abstract

The inner composition, defect content and morphology of AlGaAs nanowires (NWs) grown on (111)B-GaAs by Au-catalyzed MOVPE is reported. The NWs grow tapered with their [111] axis normal to the substrate. The Raman spectra of single AlGaAs NWs were measured in non-resonant conditions with sub-μ-meter spatial resolution, allowing determination of the Al content. NWs consist of GaAs for TG<475°C, but show a two-fold compositional structure for TG>475°C, namely an AlxGa1-xAs core surrounded by an AlyGa1-yAs (y<x) shell, ascribed to the combination of Au-catalyzed (axial) and conventional (sidewall) growth. The cross-sectional shape of AlGaAs NWs changes from triangular (for TG=500÷525°C) to almost hexagonal (for TG=550°C), due to an exchange between {211} and {110} planes as the slowest to grow. The NWs have free-electron concentrations ∼10^18 cm^-3, due to Si contamination of the Al source.

Autore Pugliese

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  • P. Prete , B. Buick , E. Speiser , N. Lovergine , W. Richter

Titolo volume/Rivista

MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

Anno di pubblicazione

2011

ISSN

0272-9172

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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0

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

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Codici ASJC

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