Formation of In2O3 microrods in thermal treated InSe single crystal
Abstract
In2O3 microrods were grown by thermal oxidation of InSe single crystal under a mixture of argon−oxygen flow without the presence of a catalyst. Microrods were obtained at the temperature of about 640 °C after a thermal treatment of 180 min. The morphology, structure, and composition of the prepared materials were studied by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction spectroscopy (XRD). The microrods had a hexagonal cross-section with a diameter range of 1−3 μm and a length of between 20 and 30 μm. Structural analysis showed that the microstructures were cubic In2O3 crystal with a lattice constant of a = 10.115 Å. The possible mechanism of the formation of In2O3 microstructures is also discussed in this work
Autore Pugliese
Tutti gli autori
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Siciliano T. , Tepore A. , Micocci G. , Genga A. , Siciliano M. , Filippo E.
Titolo volume/Rivista
CRYSTAL GROWTH & DESIGN
Anno di pubblicazione
2011
ISSN
1528-7483
ISBN
Non Disponibile
Numero di citazioni Wos
10
Ultimo Aggiornamento Citazioni
28/04/2018
Numero di citazioni Scopus
10
Ultimo Aggiornamento Citazioni
28/04/2018
Settori ERC
Non Disponibile
Codici ASJC
Non Disponibile
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