Abstract

Measurements of electrical transport and excess current noise in semiconducting films of polyacenes revealed a superquadratic increase of the current and a sharp peak of the relative noise at voltage values corresponding to the trap-filling transition region. Recently, we formulated an explanation of these findings in terms of trapping and detrapping processes of the injected carriers by deep defect states. This interpretation was based on a phenomenological model that takes as input the measured I − V characteristic curve. Here we introduce a new percolative approach to transport and noise in these materials. In particular we develop two percolation models, differing in the voltage dependence of the trapping and detrapping rates: precisely, one model neglects and the other accounts for the Poole-Frenkel effect. We then discuss the results of both models in connections with experimental findings.

Autore Pugliese

• Pennetta Cecilia

Tutti gli autori

• C. Pennetta , M. Tizzoni , A. Carbone , L. Reggiani

Titolo volume/Rivista

JOURNAL OF COMPUTATIONAL ELECTRONICS

Anno di pubblicazione

2012

ISSN

1569-8025

ISBN

Non Disponibile

Numero di citazioni Wos

Nessuna citazione

Ultimo Aggiornamento Citazioni

Non Disponibile

Numero di citazioni Scopus

Non Disponibile

0

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile