Deposition of chromium oxide thin films with large thermoelectromotive force coefficient by reactive pulsed laser ablation

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Abstract

Thin films of chromium oxides were deposited on Si substrates by KrF laser ablation of a chromium target in O(2) atmosphere (0.05-5.0 Pa). Films exhibit semiconducting properties with band gap increasing (0.32-0.71 eV) with increasing pressure from 0.05 to 1.0 Pa. The largest values of the thermoelectromotive force coefficient S (similar to 3.5-4.5 mV/K) were measured in the temperature range 270-290 K for the film deposited at 1.0 Pa. The S coefficient decreases in the same temperature range for the film deposited at lower oxygen pressures.

Autore Pugliese

Tutti gli autori

  • Caricato A.P. , Luches A. , Martino M. , Valerini D. , Kudryavtsev Y.V. , Korduban A.M. , Mulenko S.A. , Gorbachuk N.T.

Titolo volume/Rivista

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS

Anno di pubblicazione

2010

ISSN

1454-4164

ISBN

Non Disponibile

Numero di citazioni Wos

8

Ultimo Aggiornamento Citazioni

27/04/2018

Numero di citazioni Scopus

10

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile